BC857BL3E6327XTMA1
TRANS PNP 45V 0.1A TSLP-3-1Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC857BL3E6327XTMA1 is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for general-purpose amplification and switching. The device exhibits a minimum DC current gain (hFE) of 220 at 2mA and 5V, and a Vce(sat) of 650mV at 5mA and 100mA. The operating temperature range extends to 150°C. Presented in a PG-TSLP-3-1 package, this transistor is commonly utilized in consumer electronics, industrial automation, and telecommunications infrastructure. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-TSLP-3-1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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