BC856BWE6327BTSA1
TRANS PNP 65V 0.1A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC856BWE6327BTSA1 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 65V and a continuous collector current capability of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 250mW, it is suitable for operation up to 150°C. The device exhibits a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage. Packaged in a PG-SOT323 (SC-70) for surface mounting, it is supplied on tape and reel. The saturation voltage (Vce Sat) is a maximum of 650mV at 5mA base current and 100mA collector current. The collector cutoff current (ICBO) is rated at a maximum of 15nA. This transistor finds application in various electronic equipment, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 250 mW |
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