BC850CE6327HTSA1
TRANS NPN 45V 0.1A SOT-23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC850CE6327HTSA1 is a high-gain NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount component, housed in a PG-SOT23 package, offers a collector emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. The device features a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage, along with a transition frequency of 250MHz. Maximum power dissipation is 330mW, with an operating junction temperature up to 150°C. The low collector cutoff current of 15nA (ICBO) and a saturation voltage of 600mV at 5mA base current and 100mA collector current make it suitable for various electronic circuits. This component is commonly utilized in the consumer electronics and industrial automation sectors. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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