BC850BWE6327HTSA1
TRANS NPN 45V 0.1A SOT-323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC850BWE6327HTSA1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. The high transition frequency of 250MHz enables efficient operation in various signal processing tasks. With a maximum power dissipation of 250mW, it is suitable for compact, thermally managed designs. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 600mV at 5mA base current and 100mA collector current. The low collector cutoff current is specified at 15nA (ICBO). Housed in a PG-SOT323 (SC-70) surface-mount package and supplied on a tape and reel, this transistor is commonly utilized in consumer electronics and industrial control systems. It operates reliably across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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