BC849CWE6327HTSA1
TRANS NPN 30V 0.1A SOT-323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC849CWE6327HTSA1 is a high-gain NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector current rating of 100 mA and a collector-emitter breakdown voltage of 30 V. With a transition frequency of 250 MHz and a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, it offers robust performance in demanding environments. The device operates at a maximum power dissipation of 250 mW and can function across an extended temperature range up to 150°C. The BC849CWE6327HTSA1 is supplied in a compact PG-SOT323 (SC-70) surface-mount package, delivered on tape and reel. Its characteristics make it suitable for use in telecommunications, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |
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