BC849CE6327HTSA1

TRANS NPN 30V 0.1A SOT-23

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Infineon Technologies BC849CE6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 330mW, it is suitable for general-purpose amplification and switching in various electronic circuits. The DC current gain (hFE) is specified at a minimum of 420 at 2mA collector current and 5V collector-emitter voltage. The transistor is supplied in a PG-SOT23 package, mounted on tape and reel. Typical applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	NPN
Operating Temperature	150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V
Frequency - Transition	250MHz
Supplier Device Package	PG-SOT23
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Power - Max	330 mW