BC849BE6327HTSA1

TRANS NPN 30V 0.1A SOT23

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Infineon Technologies BC849BE6327HTSA1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA, with a power dissipation rating of 330mW. The transition frequency is specified at 250MHz, and it exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. The transistor is supplied in a PG-SOT23 package, also known as TO-236-3 or SC-59, suitable for surface mounting. Key parameters include a collector cutoff current (ICBO) of 15nA (Max) and a Vce(sat) of 600mV at 5mA base current and 100mA collector current. The operating junction temperature range extends to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. It is provided in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	NPN
Operating Temperature	150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Frequency - Transition	250MHz
Supplier Device Package	PG-SOT23
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Power - Max	330 mW