BC848CWH6327XTSA1
TRANS NPN 30V 0.1A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC848CWH6327XTSA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current (Ic) capability of 100mA. The high DC current gain (hFE) of a minimum 420 at 2mA collector current and 5V collector-emitter voltage, combined with a transition frequency of 250MHz, makes it suitable for various switching and amplification tasks. With a maximum power dissipation of 250mW and an operating junction temperature up to 150°C, the device is housed in a compact PG-SOT323 (SC-70) package, supplied on tape and reel. This transistor is often utilized in general-purpose amplification and switching circuits across consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |
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