BC848BWE6327BTSA1
TRANS NPN 30V 0.1A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC848BWE6327BTSA1 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Its transition frequency is rated at 250MHz, with a maximum power dissipation of 250mW. The device is housed in a PG-SOT323 package, also known as SC-70, and is supplied on tape and reel. This BJT is suitable for use in general-purpose amplification and switching circuits across various electronic industries. The collector cutoff current (ICBO) is a maximum of 15nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 250 mW |