Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BC848BWE6327BTSA1

Banner
productimage

BC848BWE6327BTSA1

TRANS NPN 30V 0.1A SOT323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BC848BWE6327BTSA1 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Its transition frequency is rated at 250MHz, with a maximum power dissipation of 250mW. The device is housed in a PG-SOT323 package, also known as SC-70, and is supplied on tape and reel. This BJT is suitable for use in general-purpose amplification and switching circuits across various electronic industries. The collector cutoff current (ICBO) is a maximum of 15nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition250MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max250 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BC 850B B5003

TRANS NPN 45V 0.1A SOT23

product image
BCX71GE6327HTSA1

TRANS PNP 45V 0.1A SOT23

product image
BCP 55-16 E6327

TRANS NPN 60V 1A SOT223-4