BC848AE6327HTSA1
TRANS NPN 30V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC848AE6327HTSA1 is an NPN bipolar junction transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 30 V and a maximum collector current of 100 mA. With a transition frequency of 250 MHz and a power dissipation of 330 mW, it is suitable for signal amplification and switching in consumer electronics and industrial control systems. The DC current gain (hFE) is a minimum of 110 at 2 mA collector current and 5 V collector-emitter voltage. The transistor is housed in a PG-SOT23 surface-mount package, supplied on tape and reel. Key parameters include a Vce(sat) of 600 mV at 5 mA base current and 100 mA collector current, and a collector cutoff current (ICBO) of 15 nA. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 330 mW |
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