BC847BWH6327XTSA1
TRANS NPN 45V 0.1A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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This Infineon Technologies NPN bipolar junction transistor (BJT), part number BC847BWH6327XTSA1, is designed for surface mount applications within the PG-SOT323 package. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device offers a minimum DC current gain (hFE) of 200 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. Power dissipation is rated at 250 mW, and it operates up to a maximum junction temperature of 150°C. The collector cutoff current (ICBO) is a maximum of 15 nA. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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