BC847BWE6327BTSA1
TRANS NPN 45V 0.1A SOT-323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC847BWE6327BTSA1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount device, housed in a PG-SOT323 (SC-70) package, features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. It offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. The transistor exhibits a transition frequency of 250MHz and a maximum power dissipation of 250mW. Key parameters include a collector cutoff current (ICBO) of 15nA and a Vce saturation voltage of 600mV at 5mA base current and 100mA collector current. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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