BC847AE6327HTSA1
BJT SOT23 45V NPN 0.25W 150CManufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC847AE6327HTSA1 is an NPN bipolar junction transistor (BJT) housed in a PG-SOT23 package. This surface mount device offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It features a transition frequency of 100MHz and a maximum power dissipation of 200mW. The device exhibits a minimum DC current gain (hFE) of 110 at 2mA and 5V, with a saturation voltage (Vce Sat) of 500mV at 5mA collector current. Operating temperature range is from -65°C to 150°C. This component is commonly utilized in general purpose amplification and switching applications across industries such as consumer electronics and industrial automation. The part is supplied on tape and reel.
Additional Information
Series: SOT-23RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |
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