BC846BWE6327HTSA1
TRANS NPN 65V 0.1A SOT-323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC846BWE6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for a variety of electronic applications. This component features a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 65 V. With a transition frequency (fT) of 250 MHz and a minimum DC current gain (hFE) of 200 @ 2mA, 5V, it is suitable for signal amplification and switching tasks. The device offers a maximum power dissipation of 250 mW and operates at junction temperatures up to 150°C. Packaged in the PG-SOT323 (SC-70) surface-mount package, it is supplied on tape and reel. Typical applications include general-purpose amplification and switching circuits across industrial, consumer electronics, and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 250 mW |