BC818K40E6327HTSA1
TRANS NPN 25V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
Quality Control: Learn More
Infineon Technologies BC818K40E6327HTSA1 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 500mA. The device exhibits a minimum DC current gain (hFE) of 250 at 100mA collector current and 1V collector-emitter voltage. Its transition frequency is rated at 170MHz, making it suitable for moderate frequency operations. The transistor has a maximum power dissipation of 500mW and an operating junction temperature of up to 150°C. Presented in a PG-SOT23 surface mount package, this unit is supplied on a tape and reel. The Vce(sat) is a maximum of 700mV at 50mA base current and 500mA collector current. Applications include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |