BC818K16WE6327HTSA1
TRANS NPN 25V 0.5A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC818K16WE6327HTSA1 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector current rating of 500 mA and a maximum collector-emitter breakdown voltage of 25 V. With a transition frequency of 170 MHz and a maximum power dissipation of 250 mW, it is suitable for general-purpose amplification and switching tasks. The transistor exhibits a minimum DC current gain (hFE) of 100 at 100 mA and 1 V. The saturation voltage (Vce Sat) is specified at 700 mV maximum for an Ic of 500 mA and an Ib of 50 mA. Packaged in the PG-SOT323 (SC-70) format and supplied on tape and reel, this device operates at junction temperatures up to 150°C. It finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 250 mW |
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