BC817K25WH6327XTSA1
TRANS NPN 45V 0.5A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies' BC817K25WH6327XTSA1 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 500mA. With a transition frequency of 170MHz and a maximum power dissipation of 250mW, it is suitable for general-purpose switching and amplification. The device exhibits a minimum DC current gain (hFE) of 160 at 100mA and 1V, and a Vce saturation of 700mV at 50mA and 500mA. It is supplied in the PG-SOT323 package and operates at junction temperatures up to 150°C. This transistor finds application in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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