BC817K25WE6327HTSA1
TRANS NPN 45V 0.5A SOT323Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN bipolar transistor, part number BC817K25WE6327HTSA1. This component offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA. Featuring a transition frequency of 170MHz and a maximum power dissipation of 250mW, it is housed in a PG-SOT323 package for surface mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 100mA and 1V, and a collector cutoff current of 100nA (ICBO). The saturation voltage (Vce Sat) is a maximum of 700mV at 50mA and 500mA. Operating temperature range extends to 150°C (TJ). This device is supplied in Tape & Reel (TR) packaging. Applications include general-purpose switching and amplification in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT323 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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