BC 860BF E6327
TRANS PNP 45V 0.1A TSFP-3Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor (BJT), part number BC-860BF-E6327. This device features a collector current (Ic) rating of 100 mA and a collector-emitter breakdown voltage (Vce) of 45 V. With a minimum DC current gain (hFE) of 220 at 2 mA and 5 V, and a transition frequency of 250 MHz, it is suitable for various signal amplification and switching applications. The transistor exhibits a maximum power dissipation of 250 mW and operates across a temperature range of -55°C to 150°C. It is supplied in the PG-TSFP-3-1 package, commonly known as SOT-723, for surface mounting. The collector cutoff current (ICBO) is specified at a maximum of 15 nA. Typical applications include consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-TSFP-3-1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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