BC 856B E6327

TRANS PNP 65V 0.1A SOT23

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Infineon Technologies BC-856B-E6327 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation of 330mW. It offers a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage, and a transition frequency of 250MHz. The device is housed in a compact PG-SOT23 surface-mount package, suitable for high-density board designs. Key parameters include a Vce(sat) of 650mV at 5mA base current and 100mA collector current, and a low collector cutoff current of 15nA. This transistor is commonly utilized in consumer electronics, industrial automation, and automotive systems. The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Transistor Type	PNP
Operating Temperature	150°C (TJ)
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Frequency - Transition	250MHz
Supplier Device Package	PG-SOT23
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	65 V
Power - Max	330 mW