BC 850C B5003
TRANS NPN 45V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC-850C-B5003 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45 V and a continuous collector current capability of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency of 250 MHz. Maximum power dissipation is rated at 330 mW, and it operates within an industrial temperature range up to 150°C. The device is supplied in the PG-SOT23 package and comes on tape and reel. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems. Saturation voltage is a maximum of 600 mV at 5 mA base current and 100 mA collector current, with a collector cutoff current of 15 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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