BC 850BF E6327
TRANS NPN 45V 0.1A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BC-850BF-E6327, is designed for general-purpose switching and amplification applications. This transistor features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 250mW, it is suitable for use in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. It is supplied in a PG-SOT23 package for surface mounting and operates at temperatures up to 150°C. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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