BC 817-25 E6327
TRANS NPN 45V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies NPN Bipolar Junction Transistor, part number BC-817-25-E6327. This device features a 45V collector-emitter breakdown voltage and a maximum collector current of 500 mA. The DC current gain (hFE) is a minimum of 160 at 100 mA and 1V. It operates with a transition frequency of 170 MHz and a maximum power dissipation of 330 mW. The transistor is housed in a PG-SOT23 surface mount package and is supplied on tape and reel. The collector cutoff current (ICBO) is a maximum of 100 nA. The Vce saturation voltage is 700 mV at 50 mA collector current and 50 mA base current. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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