BC 808-40 E6327
TRANS PNP 25V 0.5A SOT-23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor, BC-808-40-E6327. This device features a 25 V collector-emitter breakdown voltage and a maximum continuous collector current of 500 mA. With a power dissipation of 330 mW and a transition frequency of 200 MHz, it is suitable for applications requiring moderate switching speeds and current handling. The minimum DC current gain (hFE) is specified as 250 at 100 mA collector current and 1 V Vce. The saturation voltage (Vce Sat) is a maximum of 700 mV at 50 mA base current and 500 mA collector current. The transistor is housed in a PG-SOT23 surface-mount package and is supplied on a tape and reel. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 330 mW |
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