BC 808-40 B6327
TRANS PNP 25V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor, part number BC-808-40-B6327. This device features a 25V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 200MHz and a power dissipation of 330mW, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is specified at 250 at 100mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce(sat) of 700mV at 50mA base current and 500mA collector current. Packaged in a PG-SOT23 surface-mount configuration, this component is commonly utilized in consumer electronics and industrial control systems. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 330 mW |
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