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BC 808-25W H6327

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BC 808-25W H6327

TRANS PNP 25V 0.5A SOT323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

Quality Control: Learn More

Infineon Technologies BC-808-25W-H6327 is a PNP bipolar junction transistor designed for surface mount applications. This component offers a 25V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 250mW. The device exhibits a minimum DC current gain (hFE) of 160 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce) is specified at a maximum of 700mV for a base current of 50mA and collector current of 500mA. Collector cutoff current (ICBO) is a maximum of 100nA. The operating junction temperature range extends to 150°C. Packaged in a PG-SOT323 (SC-70) case and supplied on tape and reel, this transistor is suitable for use in various electronic circuits, including general-purpose amplification and switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition200MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max250 mW

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