BC 808-25 E6327
TRANS PNP 25V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies BC-808-25-E6327 is a PNP bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage (Vce) of 25 V and a maximum collector current (Ic) of 500 mA. It offers a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, with a transition frequency of 200 MHz. The maximum power dissipation is rated at 330 mW, and it operates at temperatures up to 150°C. The device is packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel (TR). This transistor is suitable for use in various industrial, consumer electronics, and automotive applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 330 mW |
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