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BC 807-25W H6327

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BC 807-25W H6327

TRANS PNP 45V 0.5A SOT323

Manufacturer: Infineon Technologies

Categories: Single Bipolar Transistors

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Infineon Technologies PNP Bipolar Junction Transistor, part number BC-807-25W-H6327. This device offers a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Featuring a transition frequency of 200MHz and a maximum power dissipation of 250mW, it is housed in a PG-SOT323 surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 100mA and 1V, and a saturation voltage (Vce(sat)) of 700mV at 50mA and 500mA. The collector cutoff current (ICBO) is specified at a maximum of 100nA. Operating temperature range extends to 150°C (TJ). This component finds application in various industrial and consumer electronics sectors. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition200MHz
Supplier Device PackagePG-SOT323
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max250 mW

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