BC 807-25 E6327
TRANS PNP 45V 0.5A SOT23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP bipolar junction transistor, part number BC-807-25-E6327. This device features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 330mW, it is suitable for general-purpose switching and amplification applications. The minimum DC current gain (hFE) is 160 at 100mA and 1V. The transistor is housed in a PG-SOT23 surface-mount package, supplied on tape and reel. Collector cutoff current (ICBO) is a maximum of 100nA, and Vce saturation is 700mV at 50mA and 500mA. Operating temperature range is up to 150°C (TJ). This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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