BC 807-16 E6327
TRANS PNP 45V 0.5A SOT-23Manufacturer: Infineon Technologies
Categories: Single Bipolar Transistors
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Infineon Technologies PNP Bipolar Junction Transistor, part number BC-807-16-E6327. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. The transition frequency is 200MHz, with a maximum power dissipation of 330mW. Key parameters include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a collector cutoff current (ICBO) of 100nA maximum. The saturation voltage (Vce Sat) is 700mV at 50mA collector current and 50mA base current. This device is housed in a PG-SOT23 surface-mount package, supplied on tape and reel. Operating temperature is rated up to 150°C (TJ). This transistor is suitable for applications in consumer electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | PG-SOT23 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 330 mW |
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