PTVA101K02EVV1XWSA1
RF MOSFET LDMOS H-36275-4Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTVA101K02EVV1XWSA1 is a high-power LDMOS RF power transistor designed for demanding applications. This dual-configuration device operates within the 1.03 GHz to 1.09 GHz frequency range, delivering a nominal gain of 17.5 dB and a substantial output power of 950 W. Engineered with LDMOS technology, it provides excellent linearity and efficiency. The transistor is housed in an H-36275-4 package for chassis mounting, facilitating thermal management in high-power systems. This component is suitable for use in base station infrastructure and other high-frequency power amplification circuits where robust performance and reliability are critical. The device is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | H-36275-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.03GHz ~ 1.09GHz |
| Configuration | Dual |
| Power - Output | 950W |
| Gain | 17.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36275-4 |
| Voltage - Rated | 50 V |
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