PTFB192557SHV1XWSA1
RF MOSFET LDMOS 28V H-34288-4Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFB192557SHV1XWSA1 is an LDMOS RF power transistor designed for high-frequency applications. This component operates at 28V test voltage with a 1.35A test current, delivering 60W of output power at 1.99GHz. It offers a typical gain of 19dB and is housed in an H-34288G-4/2 package, suitable for chassis mounting. The device is manufactured using LDMOS technology, providing robust performance for demanding RF power amplifier designs. Applications for this transistor include base station infrastructure, radar systems, and industrial RF heating. The unit is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | H-34288G-4/2 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.99GHz |
| Power - Output | 60W |
| Gain | 19dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-34288G-4/2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.35 A |
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