PTFB191501FV1R250XTMA1
RF MOSFET LDMOS 30V H-37248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFB191501FV1R250XTMA1 is a high-power RF LDMOS transistor designed for demanding applications. This component operates with a 30V test voltage and a 1.2A test current, delivering up to 150W of output power at 1.99GHz with an 18dB gain. Its LDMOS technology ensures excellent performance and reliability in RF power amplification. The PTFB191501FV1R250XTMA1 is housed in an H-37248-2 package, a 2-Flatpack, Fin Leads, Flanged configuration suitable for surface mounting. This robust transistor finds application in base stations, radar systems, and other commercial and industrial RF power amplifier designs. The component is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.99GHz |
| Power - Output | 150W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-37248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.2 A |