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PTFB191501EV1R250XTMA1

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PTFB191501EV1R250XTMA1

RF MOSFET LDMOS 30V H-36248-2

Manufacturer: Infineon Technologies

Categories: RF FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies PTFB191501EV1R250XTMA1 is an RF power MOSFET utilizing LDMOS technology. This component is designed for high-frequency applications, operating at 1.99GHz with a typical power output of 150W and a gain of 18dB. It features a drain current of 1.2A at a test voltage of 30V, with a rated voltage of 65V. The device is housed in an H-36248-2 package, specifically a 2-Flatpack with fin leads, suitable for surface mounting. This RF MOSFET is commonly employed in wireless infrastructure, base stations, and radar systems where robust performance at high frequencies is critical. The component is supplied in Tape & Reel packaging for automated assembly processes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case2-Flatpack, Fin Leads
Current Rating (Amps)-
Mounting TypeSurface Mount
Frequency1.99GHz
Power - Output150W
Gain18dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageH-36248-2
Voltage - Rated65 V
Voltage - Test30 V
Current - Test1.2 A

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