PTFA241301E V1
RF MOSFET LDMOS 28V H-30260-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies GOLDMOS® PTFA241301E-V1 is a high-power RF LDMOS transistor designed for demanding wireless applications. This surface-mount device operates at 2.42 GHz, delivering 130W of output power with a characteristic gain of 14dB. It is engineered for robust performance with a test voltage of 28V and a rated voltage of 65V. The PTFA241301E-V1 is suitable for use in base station infrastructure, broadcast transmitters, and other high-frequency power amplification systems. The component is supplied in an H-30260-2 package.
Additional Information
Series: GOLDMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.42GHz |
| Power - Output | 130W |
| Gain | 14dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-30260-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.15 A |
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