PTFA212001EV4R0XTMA1
RF MOSFET LDMOS 30V H-36260-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies' PTFA212001EV4R0XTMA1 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. Operating within the 2.11 GHz to 2.17 GHz frequency range, this device delivers a substantial 200W of output power with a typical gain of 15.8 dB at a 30V test voltage and 1.6A test current. The LDMOS technology ensures excellent thermal performance and ruggedness, making it suitable for base station power amplification. Encased in an H-36260-2 package, the PTFA212001EV4R0XTMA1 is supplied in strip packaging for efficient assembly. This component is a key enabler for advanced mobile communication systems and other high-frequency power amplification needs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | 10µA |
| Frequency | 2.11GHz ~ 2.17GHz |
| Power - Output | 200W |
| Gain | 15.8dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36260-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.6 A |
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