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PTFA211801E V4 R250

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PTFA211801E V4 R250

RF MOSFET LDMOS 28V H-36260-2

Manufacturer: Infineon Technologies

Categories: RF FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies PTFA211801E-V4-R250 is a high-performance RF power MOSFET utilizing LDMOS technology. This device is engineered for demanding applications in wireless infrastructure, featuring a 28V test voltage and capable of delivering 35W of output power at 2.14GHz. It exhibits a gain of 15.5dB and a test current of 1.2A, making it suitable for power amplification stages. The component is supplied in the H-36260-2 package, designed for chassis mounting and available on tape and reel (TR). This RF MOSFET is a key component for base station transmitters and other high-frequency power amplification systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseH-36260-2
Current Rating (Amps)10µA
Mounting TypeChassis Mount
Frequency2.14GHz
Power - Output35W
Gain15.5dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageH-36260-2
Voltage - Rated65 V
Voltage - Test28 V
Current - Test1.2 A

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