PTFA210601EV4XWSA1
RF MOSFET LDMOS 28V H-36265-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA210601EV4XWSA1 is a high-power RF LDMOS transistor designed for demanding wireless applications. This surface-mount component, housed in an H-36265-2 package, operates at a drain voltage of 28V with a test current of 550mA. It delivers 12W of output power at a frequency of 2.14GHz, offering a gain of 16dB. The PTFA210601EV4XWSA1 is engineered for reliability and performance in base station infrastructure and other high-frequency power amplifier designs. Its LDMOS technology ensures excellent linearity and efficiency across a broad operating range.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | H-36265-2 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.14GHz |
| Power - Output | 12W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36265-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 550 mA |
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