PTFA191001EV4XWSA1
RF MOSFET LDMOS 30V H-36248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA191001EV4XWSA1 is a high-performance RF LDMOS transistor designed for demanding applications. This device operates at 1.96GHz, delivering a power output of 44dBm with a gain of 17dB. It features a 30V test voltage and a 900mA test current, built on advanced LDMOS technology for optimal efficiency and linearity. The PTFA191001EV4XWSA1 is supplied in an H-36248-2 package, a 2-flatpack with fin leads, suitable for surface mount applications. Its robust design makes it ideal for use in telecommunications infrastructure and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 1.96GHz |
| Power - Output | 44dBm |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 900 mA |
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