PTFA191001EV4R250XTMA1
RF MOSFET LDMOS 30V H-36248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA191001EV4R250XTMA1 is a high-performance RF LDMOS transistor designed for demanding applications. This surface-mount component operates at 1.96GHz with a test voltage of 30V and a drain current of 900mA. It delivers a power output of 44dBm and features a gain of 17dB. The device is housed in an H-36248-2 package, suitable for efficient thermal management. Its robust LDMOS technology ensures reliability and performance in challenging RF environments. This transistor finds application in base station infrastructure and other high-frequency communication systems requiring superior power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 1.96GHz |
| Power - Output | 44dBm |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 900 mA |
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