PTFA181001EV4XWSA1
RF MOSFET LDMOS 28V H-36248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA181001EV4XWSA1 is a 100W RF LDMOS transistor designed for high-power applications. This MOSFET operates with a drain-source voltage of 28V at a test current of 750mA, delivering a typical gain of 16.5dB at 1.88GHz. The device is housed in the H-36248-2 package, a 2-flatpack configuration with fin leads, suitable for surface mounting. Its robust LDMOS technology ensures efficient power amplification. This component is commonly utilized in wireless infrastructure and base station power amplifier modules. The PTFA181001EV4XWSA1 is supplied in a tray.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 1.88GHz |
| Power - Output | 100W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 750 mA |
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