PTFA181001EV4R250XTMA1
RF MOSFET LDMOS 28V H-36248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA181001EV4R250XTMA1 is a 28V LDMOS RF power transistor designed for demanding high-frequency applications. This component offers a typical output power of 100W at 1.88GHz with a gain of 16.5dB. It is rated for a drain voltage of 65V and features a 28V test voltage. The device is housed in an H-36248-2 package, a 2-Flatpack with Fin Leads suitable for surface mounting. Its robust LDMOS technology ensures efficient performance in challenging RF environments. This transistor is commonly utilized in base station infrastructure, broadcast transmitters, and other high-power RF systems. The PTFA181001EV4R250XTMA1 is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 1.88GHz |
| Power - Output | 100W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 750 mA |
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