PTFA092201E V1
RF MOSFET LDMOS 30V H-36260-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA092201E-V1 is a high-power RF LDMOS transistor designed for demanding applications. This device operates at a test voltage of 30 V and delivers 220 W of output power at 960 MHz, with a typical gain of 18.5 dB. The transistor features a robust design, utilizing LDMOS technology for reliable performance in high-frequency power amplification. It is supplied in a H-36260-2 package, suitable for chassis mounting. This component is commonly employed in industrial, scientific, and medical (ISM) applications, as well as in base station infrastructure and broadcast transmitters where high efficiency and power handling are critical. The PTFA092201E-V1 is provided in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | H-36260-2 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 960MHz |
| Power - Output | 220W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36260-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.85 A |
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