PTFA082201F V1
RF MOSFET LDMOS 30V H-37260-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies PTFA082201F-V1 is an LDMOS RF power MOSFET designed for demanding applications. This surface mount component, in the H-37260-2 package, delivers 220W of output power at 894MHz. Tested at 30V, it offers a nominal gain of 18dB and a test current of 1.95A, with a rated voltage of 65V. Its robust construction and high power handling capabilities make it suitable for use in base station infrastructure and industrial RF power amplification systems. The device is supplied in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 894MHz |
| Power - Output | 220W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-37260-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 1.95 A |
Request a Quote
Clients Also Buy
BF 5030R E6327
RF MOSFET 3V SOT143R
PTFA181001EV4R250XTMA1
RF MOSFET LDMOS 28V H-36248-2
PTFB212507SHV1R250XTMA1
RF MOSFET LDMOS