PTFA081501F V1
RF MOSFET LDMOS 28V H-31248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTFA081501F-V1 is a 150W LDMOS RF power transistor from the GOLDMOS® series. This surface mount component is designed for high-frequency applications, operating at 900MHz with a nominal gain of 18dB. The device features a 28V test voltage and a 950mA test current, with a rated voltage of 65V. Its robust H-31248-2 package, a 2-Flatpack with fin leads, ensures efficient thermal management. This RF power transistor is commonly utilized in base station infrastructure and other demanding wireless communication systems.
Additional Information
Series: GOLDMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 900MHz |
| Power - Output | 150W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-31248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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