PTFA081501E V1
RF MOSFET LDMOS 28V H-30248-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies GOLDMOS® RF MOSFET, part number PTFA081501E-V1, is a high-power LDMOS transistor designed for demanding RF applications. This device operates at a 28V test voltage and delivers 150W of output power at 900MHz. It features a nominal gain of 18dB and a continuous drain current rating of 950mA at the test condition. The PTFA081501E-V1 utilizes LDMOS technology for robust performance and is housed in the H-30248-2 package, a 2-Flatpack with fin leads and a flange for effective thermal management. This component is suitable for use in base station infrastructure, industrial heating, and other high-frequency power amplification systems.
Additional Information
Series: GOLDMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 900MHz |
| Power - Output | 150W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-30248-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 950 mA |
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