PTFA043002E V1
RF MOSFET LDMOS 32V H-30275-4Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies PTFA043002E-V1 is an RF LDMOS power transistor designed for high-power applications. This device operates at 800MHz, delivering a power output of 100W with a typical gain of 16dB. The transistor is rated for a drain voltage of 65V and tested at 32V, with a continuous drain current of 1.55A. It features LDMOS technology for efficient performance in demanding RF power amplifier designs. The PTFA043002E-V1 is supplied in the H-30275-4 package, designed for surface mounting. This component is commonly utilized in base station infrastructure and high-power RF systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Power - Output | 100W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-30275-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 32 V |
| Current - Test | 1.55 A |
Request a Quote
Clients Also Buy
PTFA092201E V1
RF MOSFET LDMOS 30V H-36260-2
BF 5030R E6327
RF MOSFET 3V SOT143R
PTFA192001EV4R250XTMA1
RF MOSFET LDMOS 30V H-36260-2
