PTF210101M V1
RF MOSFET LDMOS 28V RFP-10Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies GOLDMOS® PTF210101M-V1 is a high-performance RF power transistor utilizing LDMOS technology. This device is rated for 65V with a test voltage of 28V, delivering 10W of output power at a frequency of 2.17GHz. It exhibits a gain of 15dB and a test current of 180mA, with a minimal standby current rating of 1µA. Packaged in the PG-RFP-10 (10-TFSOP, 10-MSOP) and supplied on tape and reel, this surface-mount component is engineered for demanding RF applications. Its robust performance characteristics make it suitable for use in wireless infrastructure, satellite communications, and industrial RF heating systems.
Additional Information
Series: GOLDMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-TFSOP, 10-MSOP (0.118"", 3.00mm Width) |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Power - Output | 10W |
| Gain | 15dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PG-RFP-10 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 180 mA |
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