PTF180101M V1
RF MOSFET LDMOS 28V RFP-10Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies PTF180101M-V1 is a GOLDMOS® series RF power MOSFET utilizing LDMOS technology. This component is specified for operation at 1.99GHz, delivering 10W of output power with a typical gain of 16.5dB. The device is rated for 65V and tested at 28V, with a nominal drain current of 180mA. Designed for surface mounting, it is supplied in the PG-RFP-10 package, delivered on tape and reel. The PTF180101M-V1 is suitable for applications in wireless infrastructure and power amplification stages within RF systems.
Additional Information
Series: GOLDMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-TFSOP, 10-MSOP (0.118"", 3.00mm Width) |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 1.99GHz |
| Power - Output | 10W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PG-RFP-10 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 180 mA |
Request a Quote
Clients Also Buy
PTF080101M V1
RF MOSFET LDMOS 28V RFP-10
PTF210101M V1
RF MOSFET LDMOS 28V RFP-10
PTFA081501F V1
RF MOSFET LDMOS 28V H-31248-2
