PTF141501E V1
RF MOSFET LDMOS 28V H-30260-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies GOLDMOS® PTF141501E-V1 is a high-power LDMOS RF transistor designed for demanding wireless infrastructure and industrial applications. This surface mount device, packaged in an H-30260-2 configuration, delivers 150W of output power at 1.5GHz. It features a 28V test voltage and a 1.5A test current, with a typical gain of 16.5dB. The component utilizes LDMOS technology for robust performance and linearity. This device is suitable for base station power amplification, radar systems, and other high-frequency power amplifier designs where efficiency and reliability are paramount.
Additional Information
Series: GOLDMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 1.5GHz |
| Power - Output | 150W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-30260-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.5 A |
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